FZT558 transistor equivalent, pnp high voltage transistor.
* BVCEO > -400V
* IC = -200mA High Continuous Current
* Excellent hFE Characteristics up to -100mA
* Low Saturation Voltage VCE(sat) < -200mV @ -20mA
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the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances betwee.
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