FMMT634Q datasheet, transistor equivalent, Diodes

Features and benefits

* BVCEO > 100V
* IC = 900mA high Continuous Collector Current
* ICM = 5A Peak Pulse Current
* 625mW Power dissipation
* hFE > 5k up to 2A for high cur.

Application

Features
* BVCEO > 100V
* IC = 900mA high Continuous Collector Current
* ICM = 5A Peak Pulse Current
* .

Description

This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of Automotive Applications. Features
* BVCEO > 100V
* IC = 900mA high Continuous Collector Current
* ICM = 5A Peak Pulse Current
* 625mW Power.

Image gallery