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Diodes Semiconductor Electronic Components Datasheet

DSS4160U Datasheet

NPN TRANSISTOR

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Features
Epitaxial Planar Die Construction
Low Collector-Emitter Saturation Voltage, VCE(SAT)
Complementary PNP Type Available (DSS5160U)
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 1)
"Green Device" (Note 2)
DSS4160U
LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
Mechanical Data
Case: SOT-323
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish Matte Tin annealed over Copper Plated
Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.006 grams (approximate)
C
Top View
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Pulse Collector Current
Base Current (DC)
Peak Base Current
BE
Device Schematic
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
IBM
Value
80
60
5
1
2
300
1
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ TA = 25°C
Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25°C
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
400
313
-55 to +150
Notes:
1. No purposefully added lead.
2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
Unit
V
V
V
A
A
mA
A
Unit
mW
°C/W
°C
DSS4160U
Document number: DS31684 Rev. 2 - 2
1 of 5
www.diodes.com
March 2009
© Diodes Incorporated
Free Datasheet http://www.datasheet4u.com/


Diodes Semiconductor Electronic Components Datasheet

DSS4160U Datasheet

NPN TRANSISTOR

No Preview Available !

DSS4160U
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 4)
Emitter-Base Breakdown Voltage
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
Min
80
60
5
Collector Cutoff Current
ICBO
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
ICES
IEBO
hFE
250
200
100
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
VCE(SAT)
RCE(SAT)
VBE(SAT)
VBE(ON)
Cobo
fT
ton
td
tr
toff
ts
tf
150
Notes: 4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle 2%.
Typ
63
33
30
420
380
40
Max
100
50
100
100
115
150
280
280
1.1
0.9
10
Unit Test Condition
V IC = 100μA, IE = 0
V IC = 10mA, IB = 0
V IE = 100μA, IC = 0
nA VCB = 60V, IE = 0
μA VCB = 60V, IE = 0, TA = 150°C
nA VCE = 60V, VBE = 0
nA VEB = 5V, IC = 0
VCE = 5V, IC = 1mA
VCE = 5V, IC = 500mA
VCE = 5V, IC = 1A
IC = 100mA, IB = 1mA
mV IC = 500mA, IB = 50mA
IC = 1A, IB = 100mA
mIC = 1A, IB = 100mA
V IC = 1A, IB = 50mA
V VCE = 5V, IC = 1A
pF VCB = 10V, f = 1.0MHz
MHz VCE = 10V, IC = 50mA, f = 100MHz
ns
ns
ns VCC = 10V
ns IC = 0.5A, IB1 = IB2 = 25mA
ns
ns
600
500
400
300
200
100
RθJA = 313°C/W
0
0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs.
Ambient Temperature (Note 3)
10
Pw = 1ms
1 Pw = 10ms
0.1
0.01
Pw = 100ms
DC
0.001
0.1 1
10 100
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage (Note 3)
DSS4160U
Document number: DS31684 Rev. 2 - 2
2 of 5
www.diodes.com
March 2009
© Diodes Incorporated
Free Datasheet http://www.datasheet4u.com/


Part Number DSS4160U
Description NPN TRANSISTOR
Maker Diodes
PDF Download

DSS4160U Datasheet PDF






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