DMP2100UCB9 datasheet, mosfet equivalent, Diodes

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Features and benefits

* LD-MOS Technology with the Lowest Figure of Merit: RDS(on) = 80mΩ to Minimize On-State Losses Qg = 3.3nC for Ultra-Fast Switching
* Vgs(th) = -0.7V typ. for a L.

Application

Features and Benefits
* LD-MOS Technology with the Lowest Figure of Merit: RDS(on) = 80mΩ to Minimize On-State Los.

Description

This new generation MOSFET is designed to minimize the on-state resistance (RD1D2(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features and Benefits
* LD-MOS Technology .

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