V(BR)DSS -20V RDS(ON) 1.9mΩ @ VGS = -10V 2.4mΩ @ VGS = -4.5V 3.8mΩ @ VGS = -2.5V ID TC = +25°C -60A -60A -60A Description This new generation P-Channel Enhancement Mo.

* Switch
* Thermally Efficient Package-Cooler Running Applications
* High Conversion Efficiency
* Low R.

This new generation P-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switch. Applications
* Switch
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