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DMNH6011LK3 - N-channel MOSFET

General Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Key Features

  • Rated to +175°C.
  • Ideal for High Ambient Temperature Environments.
  • 100% Unclamped Inductive Switching.
  • Ensures more Reliable and Robust End.

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ADVANCED INFORMATION Green DMNH6011LK3 55V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 55V RDS(ON) Max 12mΩ @ VGS = 10V 18mΩ @ VGS = 4.5V ID Max TC = +25°C 80A 65A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features  Rated to +175°C – Ideal for High Ambient Temperature Environments  100% Unclamped Inductive Switching – Ensures more Reliable and Robust End Application  Low On-Resistance  Low Input Capacitance  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.