DMN2501UFB4 mosfet equivalent, n-channel mosfet.
* Low On-Resistance
* Very Low Gate Threshold Voltage VGS(TH), 1.0V Max.
* Low Input Capacitance
* Fast Switching Speed
* Ultra-Small Surfaced Mount P.
This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching.
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