DMN2501UFB4 datasheet, mosfet equivalent, Diodes

Features and benefits

* Low On-Resistance
* Very Low Gate Threshold Voltage VGS(TH), 1.0V Max.
* Low Input Capacitance
* Fast Switching Speed
* Ultra-Small Surfaced Mount P.

Application

This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching.

Description

and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
* DC-DC Converters
* Pow.

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