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A Product Line of Diodes Incorporated
DMN2300U
20V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23
Product Summary
V(BR)DSS 20V
RDS(on) 175mΩ @ VGS = 4.5V 240mΩ @ VGS = 2.5V 360mΩ @ VGS = 1.8V
ID Max (Note 5) 1.40A @ TA = 25°C 1.20A @ TA = 25°C 1.0A @ TA = 25°C
Features and Benefits
• On resistance <200mΩ • Low Gate Threshold Voltage • Fast Switching Speed • “Lead Free”, RoHS Compliant (Note 1) • Halogen and Antimony Free. "Green" Device (Note 2) • ESD Protected Gate 2kV • Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
DMN2300U Datasheet
