DMN2058U Datasheet | Diodes Incorporated

20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) Max 35mΩ @ VGS = 10V 40mΩ @ VGS = 4.5V ID Max 4.6A 4.3A Features and Benefits - Low On-Resistance - Low Gate Threshold Voltage - Low Input Capacitance - Fast Switching Speed - Low Input/Output Leakage - Totally Lead-Free & Fully Ro HS pliant (Notes 1 & 2) - Halogen- and Antimony-Free. “Green” Device (Note 3) Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. - Battery Charging - Power Management Functions - DC-DC Converters - Portable Power Adaptors Mechanical Data - Case: SOT23 - Case Material: Molded Plastic, “Green” Molding pound. UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020 - Terminals: Finish- Matte Tin Annealed over Copper Lead-Frame. Solderable per MIL-STD-202, Method 208 - Terminals Connections: See Diagram Below - Weight: 0.009 grams (Approximate) Top View Internal...