Datasheet Summary
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 20V
RDS(ON) Max 35mΩ @ VGS = 10V 40mΩ @ VGS = 4.5V
ID Max 4.6A 4.3A
Features and Benefits
- Low On-Resistance
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
- Halogen- and Antimony-Free. “Green” Device (Note 3)
Description and Applications
This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
- Battery Charging
- Power Management Functions
- DC-DC Converters
- Portable Power...