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DMN2058U
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 20V
RDS(ON) Max 35mΩ @ VGS = 10V 40mΩ @ VGS = 4.5V
ID Max 4.6A 4.3A
Features and Benefits
• Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen- and Antimony-Free. “Green” Device (Note 3)
Description and Applications
This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
• Battery Charging • Power Management Functions • DC-DC Converters • Portable Power Adaptors
Mechanical Data
• Case: SOT23 • Case Material: Molded Plastic, “Green” Molding Compound.