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DMN2028USS Datasheet N-channel MOSFET

Manufacturer: Diodes Incorporated

Overview: ADVANCE INFORMATION Product Summary V(BR)DSS 20V RDS(on) max 20mΩ @ VGS= 4.5V 28mΩ @ VGS= 2.5V ID max TA = +25°C (Note 6) 9.8A 8.

General Description

and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

 Battery charging  Power management functions  DC-DC converters  Portable power adaptors SO-8 ESD PROTECTED TO 2kV Top View S S S G DMN2028USS 20V N-CHANNEL ENHANCEMENT MODE MOSFET

Key Features

  • Low On-Resistance.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Output Leakage.
  • ESD Protected Up to 2kV.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data.
  • Case: SO-8.
  • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 (Note 1).
  • Moisture Sensitivity: Level 1 per.

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