DMN2009LSS Datasheet | Diodes Incorporated

SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(ON) max 8mΩ @ VGS = 10V 9mΩ @ VGS = 4.5V 12mΩ @ VGS = 2.5V ID max TA = +25°C 12A 10A 8A Features - Low On-Resistance - Low Gate Threshold Voltage - Low Input Capacitance - Fast Switching Speed - Low Input/Output Leakage - Totally Lead-Free & Fully Ro HS pliant (Notes 1 & 2) - Halogen and Antimony Free. “Green” Device (Note 3) - Qualified to AEC-Q101 Standards for High Reliability Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. - Backlighting - Power Management Functions - DC-DC Converters SO-8 Mechanical Data - Case: SO-8 - Case Material: Molded Plastic, "Green" Molding pound. UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020 - Terminal Connections Indicator: See diagram - Terminals: Finish  Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method...