DMN1029UFDB - N-CHANNEL ENHANCEMENT MODE MOSFET

Diodes Incorporated

Description

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Load switches Power-management functions Portable power adaptors

Features

Low On-Resistance.
Low Input Capacitance.
Low Profile, 0.6mm Max Height.
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
Halogen and Antimony Free. “Green” Device (Note 3).
For automotive.

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DMN1029UFDB n-channel enhancement mode mosfet by Diodes Incorporated - Datasheet Preview

Datasheet Details

Part number	DMN1029UFDB
Manufacturer	Diodes Incorporated
File Size	528.77 KB
Description	N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet	DMN1029UFDB Datasheet

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DMN1029UFDB N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 12V RDS(ON) Max 29mΩ @ VGS = 4.5V 34mΩ @ VGS = 2.5V 44mΩ @ VGS = 1.8V 65mΩ @ VGS = 1.5V ID MAX TA = +25°C 5.6A 5.1A 4.5A 3.7A Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. Applications  Load switches  Power-management functions  Portable power adaptors Features  Low On-Resistance  Low Input Capacitance  Low Profile, 0.6mm Max Height  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e.