Device BVDSS Q1 & Q4 100V Q2 & Q3 -100V RDS(ON) MAX 160mΩ @ VGS = 10V 200mΩ @ VGS = 4.5V 250mΩ @ VGS = -10V 300mΩ @ VGS = -4.5V ID TA = +25°C 2.9A 2.6A -2.3A -2.1A

Applications
* Case: V-DFN5045-12
* Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability C.

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications
* Case: V-DFN5045-12
* Case.

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