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DMG4406LSS - N-Channel MOSFET

Description

This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Backlighting Power Management Functions DC-DC Converters Fea

Features

  • 100% Unclamped Inductive Switch (UIS) test in production.
  • Low On-Resistance.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Lead Free By Design/RoHS Compliant (Note 1).
  • "Green" Device, Halogan and Antimony Free (Note 2).
  • Qualified to AEC-Q101 standards for High Reliability Mechanical Data.
  • Case: SO-8.
  • Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0.
  • Moistu.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ADVANCE INNEFWORPRMOADTIUOCNT DMG4406LSS N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 30V RDS(ON) max 11mΩ @ VGS = 10V 15mΩ @ VGS = 4.5V ID max TA = 25°C 10.3A 9.3A Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.