DMG1013T
DMG1013T is P-Channel MOSFET manufactured by Diodes Incorporated.
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS -20V
RDS(ON)
700mΩ @ VGS = -4.5V 900mΩ @ VGS = -2.5V 1300mΩ @ VGS = -1.8V
ID TA = +25°C
-460m A -420m A -350m A
Description and Applications
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
- DC-DC converters
- Load switches
- Power-management functions
Features and Benefits
- Low On-Resistance
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- ESD Protected Up to 3k V
- Totally Lead-Free & Fully Ro HS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- This part is qualified to JEDEC standards (as references in
AEC-Q) for High Reliability. https://.diodes./quality/product-definitions/
- An automotive-pliant part is available under separate datasheet (DMG1013TQ)
Mechanical Data
- Package: SOT523
- Package Material: Molded Plastic, “Green” Molding pound.
UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Finish ⎯ Matte Tin Annealed over Alloy...
