Device V(BR)DSS Q2 40V Q1 -40V RDS(on) max 24mΩ @ VGS = 10V 32mΩ @ VGS = 4.5V 45mΩ @ VGS = -10V 55mΩ @ VGS = -4.5V ID TA = +25°C 6.9A 6.0A -5.1A -4.5A
* Low In.

Applications
* DC-DC Converters
* Power Management Functions
* Backlighting Mechanical Data
* Case: SO.

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications
* DC-DC Converters
* Po.

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