DMC1229UFDB datasheet, mosfet equivalent, Diodes

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Features and benefits

Device V(BR)DSS Q1 N-Channel 12V Q2 P-Channel -12V RDS(ON) max 29mΩ @ VGS = 4.5V 34mΩ @ VGS = 2.5V 44mΩ @ VGS = 1.8V 65mΩ @ VGS = 1.5V 61mΩ @ VGS = -4.5V 81mΩ @ VG.

Application

Applications
* Low On-Resistance
* Low Input Capacitance
* Low Profile, 0.6mm Max Height
* Totally Le.

Description

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications
* Low On-Resistance
* Low Input Cap.

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