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DMC1229UFDB - MOSFET

General Description

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Low On-Resistance Low Input Capacitance Low Profile, 0.6mm Max Height

Key Features

  • Device V(BR)DSS Q1 N-Channel 12V Q2 P-Channel -12V RDS(ON) max 29mΩ @ VGS = 4.5V 34mΩ @ VGS = 2.5V 44mΩ @ VGS = 1.8V 65mΩ @ VGS = 1.5V 61mΩ @ VGS = -4.5V 81mΩ @ VGS = -2.5V 115mΩ @ VGS = -1.8V 170mΩ @ VGS = -1.5V ID MAX TA = +25°C 5.6A 5.1A 4.5A 3.7A -3.8A -3.3A -2.8A -2.3A.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DMC1229UFDB COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features Device V(BR)DSS Q1 N-Channel 12V Q2 P-Channel -12V RDS(ON) max 29mΩ @ VGS = 4.5V 34mΩ @ VGS = 2.5V 44mΩ @ VGS = 1.8V 65mΩ @ VGS = 1.5V 61mΩ @ VGS = -4.5V 81mΩ @ VGS = -2.5V 115mΩ @ VGS = -1.8V 170mΩ @ VGS = -1.5V ID MAX TA = +25°C 5.6A 5.1A 4.5A 3.7A -3.8A -3.3A -2.8A -2.3A Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications  Low On-Resistance  Low Input Capacitance  Low Profile, 0.6mm Max Height  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.