Device V(BR)DSS Q1 12V Q2 -20V RDS(ON) 17mΩ @ VGS = 4.5V 25mΩ @ VGS = 2.5V 20mΩ @ VGS = -4.5V 25mΩ @ VGS = -2.5V ID TA = +25°C 9.5A 7.8A -8.7A -7.8A Description a.

This new generation Complementary Pair Enhancement Mode MOSFET has been designed to minimize RDS(ON) and yet maintain su.

and Applications This new generation Complementary Pair Enhancement Mode MOSFET has been designed to minimize RDS(ON) and yet maintain superior switching performance. This device is ideal for use in Notebook battery power management and Loadswitch. <.

DMC1015UPD

DMC1017UPD

DMC1018UPD

DMC1018UPDWQ

DMC1028UFDB

DMC1028UVT

DMC1029UFDB

DMC1030UFDB

DMC1030UFDBQ

DMC10H172SSD

DMC1229UFDB

DMC16105NY-LY

DMC16106C

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts