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Device V(BR)DSS Q1 12V Q2 -20V RDS(ON) 17mΩ @ VGS = 4.5V 25mΩ @ VGS = 2.5V 20mΩ @ VGS = -4.5V 25mΩ @ VGS = -2.5V ID TA = +25°C 9.5A 7.8A -8.7A -7.8A Description and Applications This new generation Complementary Pair Enhancement Mode MOSFET has been designed to minimize RDS(ON) and yet maint.
