DGTD65T40S2PT datasheet, igbt equivalent, Diodes

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datasheet Download (Size : 1.36MB)

Features and benefits

* High Speed Switching & Low Power Loss
* VCE(SAT) = 1.8V @ IC = 40A
* tRR = 60ns (Typ) @ diF/dt = 820A/µs
* EOFF = 0.4mJ @ TC = +25°C
* Maximum Junct.

Application

* UPS
* Welder
* Solar Inverter
* IH Cooker Mechanical Data
* Case: TO247 (Type MC)
* Case Mate.

Description

The DGTD65T40S2PT is produced using advanced Field Stop Trench IGBT Technology, which provides excellent quality and high switching performance. Features
* High Speed Switching & Low Power Loss
* VCE(SAT) = 1.8V @ IC = 40A
* tRR = 60ns (.

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