Datasheet4U Logo Datasheet4U.com

DGD2184M - HALF BRIDGE GATE DRIVER

General Description

The DGD2184M is a high voltage / high speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a half bridge configuration.

High voltage processing techniques enable the DGD2184M’s highside to switch to 600V in a bootstrap operation.

Key Features

  • Floating High-Side Driver in Bootstrap Operation to 600V.
  • Drives Two N-Channel MOSFETs or IGBTs in Half Bridge Configuration.
  • 1.4A Source / 1.8A Sink Output Current Capability.
  • Outputs Tolerant to Negative Transients.
  • Internal Dead Time of 395ns to Protect MOSFETs.
  • Wide Low-Side Gate Driver and Logic Supply: 10V to 20V.
  • Logic Input (IN and SD.
  • ) 3.3V Capability.
  • Schmitt Triggered Logic Inputs with Internal Pull Down.
  • Undervoltage Lockout for High.

📥 Download Datasheet

Full PDF Text Transcription for DGD2184M (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for DGD2184M. For precise diagrams, and layout, please refer to the original PDF.

Description The DGD2184M is a high voltage / high speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a half bridge configuration. High voltage processing...

View more extracted text
FETs and IGBTs in a half bridge configuration. High voltage processing techniques enable the DGD2184M’s highside to switch to 600V in a bootstrap operation. The DGD2184M logic inputs are compatible with standard TTL and CMOS levels (down to 3.3V) for easy interfacing with controlling devices. The driver outputs feature high pulse current buffers designed for minimum driver cross conduction. The DGD2184M has a fixed internal deadtime of 395ns (typ). The DGD2184M is offered in SO-8 package, the operating temperature extends from -40°C to +125°C.