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DGD21814M - HIGH-SIDE AND LOW-SIDE GATE DRIVER

General Description

The DGD21814M is a high voltage / high speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a half bridge configuration.

High voltage processing techniques enable the DGD21814M’s highside to switch to 600V in a bootstrap operation.

Key Features

  • Floating High-Side Driver in Bootstrap Operation to 600V.
  • Drives Two N-Channel MOSFETs or IGBTs in a Half Bridge Configuration.
  • 1.9A Source / 2.3A Sink Output Current Capability.
  • Outputs Tolerant to Negative Transients.
  • Wide Low-Side Gate Driver and Logic Supply: 10V to 20V.
  • Logic Input (HIN and LIN) 3.3V Capability.
  • Schmitt Triggered Logic Inputs with Internal Pull Down.
  • Undervoltage Lockout for High and Low Side Drivers.
  • Extended Temperature Range:.

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Full PDF Text Transcription for DGD21814M (Reference)

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DGD21814M HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-14 Description The DGD21814M is a high voltage / high speed gate driver capable of driving N-Channel MOSFETs and IGBTs ...

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high speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a half bridge configuration. High voltage processing techniques enable the DGD21814M’s highside to switch to 600V in a bootstrap operation. The DGD21814M logic inputs are compatible with standard TTL and CMOS levels (down to 3.3V) for easy interfacing with controlling devices. The driver outputs feature high pulse current buffers designed for minimum driver cross conduction. The DGD21814M is offered in SO-14 package and the operating temperature extends from -40°C to +125°C.

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