BCP5616Q datasheet, transistor equivalent, Diodes

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Features and benefits

* BVCEO > 80V
* IC = 1A High Continuous Collector Current
* ICM = 2A Peak Pulse Current
* 2W Power Dissipation
* Low Saturation Voltage VCE(sat) < 500.

Application

Features
* BVCEO > 80V
* IC = 1A High Continuous Collector Current
* ICM = 2A Peak Pulse Current
* 2W P.

Description

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features
* BVCEO > 80V
* IC = 1A High Continuous Collector Current
* ICM = 2A Peak Pulse Current
* 2W Power Dissipation .

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