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P-Channel 60 V (D-S) MOSFET
DTU30P06
www.din-tek.jp
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
- 60 0.107 at VGS = - 10 V 0.130 at VGS = - 4.5 V
ID (A)
- 30d - 20d
TO-252
FEATURES • TrenchFET® Power MOSFET • Material categorization:
APPLICATIONS • Load Switch
S
G
GDS Top View
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C TC = 125 °C
ID
Pulsed Drain Current
IDM
Avalanche Current
IAS
Single Pulse Avalanche Energya
L = 0.1 mH
EAS
Power Dissipation
TC = 25 °C TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit - 60
± 20
- 30d - 18 - 90
- 25 106 121c 2.
DTU30P06 Datasheet
