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DTU20N180 Datasheet Preview

DTU20N180 Datasheet

N-Channel MOSFET

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N-Channel 0 V (D-S) MOSFET
'781
ZZZGLQWHNMS
PRODUCT SUMMARY
VDS (V)
RDS(on) (:)
180 0.0 at VGS = 10 V
ID (A)
35
TO-252
GDS
Top View
FEATURES
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‡ 5JDQG8,67HVWHG
APPLICATIONS
• Primary Side Switch
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 175 °C)b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 125 °C
L = 0.1 mH
TC = 25 °C
TA = 25 °C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
Limit
180
± 20
35
19
140
30
30
24
85b
6a
- 55 to 175
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambienta
Junction-to-Case (Drain)
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. See SOA curve for voltage derating.
t d 10 s
Steady State
Symbol
RthJA
RthJC
Typical
13
27
0.85
Maximum
18
50
1.1
Unit
V
A
mJ
W
°C
Unit
°C/W
1




Din-Tek

DTU20N180 Datasheet Preview

DTU20N180 Datasheet

N-Channel MOSFET

No Preview Available !

'781
ZZZGLQWHNMS
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamica
VDS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 uA
VDS = VGS, ID = 250 uA
VDS = 0 V, VGS = ± 20 V
VDS = 145 V, VGS = 0 V
VDS = 145 V, V GS = 0 V, TJ = 125 °C
VDS = 145 V, V GS = 0 V, TJ = 175 °C
VDS t5 V, VGS = 10 V
VGS = 10 V, ID = 10 A
VDS = 145 V, ID =10A
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0 V, VDS = 145 V, F = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs VDS = 145 V, V GS = 10 V, ID =10 A
Gate-Drain Chargec
Qgd
Gate Resistance
Rg
Turn-On Delay Timec
td(on)
Rise Timec
Turn-Off Delay Timec
tr
td(off)
VDD = 145 V, R L = 5.2 :
ID # 10 A, VGEN = 10 V, Rg = 2.5 :
Fall Timec
tf
Source-Drain Diode Ratings and Characteristics (TC = 25 °C)
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Pulsed Current
Diode Forward Voltageb
Source-Drain Reverse Recovery Time
,6
ISM
VSD
trr
7& ƒ&
IF = 19 A, VGS = 0 V
IF = 19 A, dI/dt = 100 A/òs
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width d 300 òs, duty cycle d 2 %.
c. Independent of operating temperature.
Min.
180
2
35
1.2
Typ.a
Max.
4
± 100
1
50
250
0.0
16
0.0
6750
1250
180
15
8
12
11
34
22
45
2.9
27
76
48
90
30
140
0.7 1.5
160 250
Unit
V
nA
uA
A
:
S
pF
nC
:
ns
A
V
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2


Part Number DTU20N180
Description N-Channel MOSFET
Maker Din-Tek
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DTU20N180 Datasheet PDF






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