DTU20N10 - N-Channel 100 V (D-S) MOSFET

Din-Tek

Download the DTU20N10 datasheet PDF. This datasheet also covers the DTU20N10-Din variant, as both devices belong to the same n-channel 100 v (d-s) mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

TrenchFET® Power MOSFET.
100 % Rg and UIS Tested.
Material categorization: TO-252 D G.

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DTU20N10 n-channel 100 v (d-s) mosfet by Din-Tek - Datasheet Preview — Note: The manufacturer provides a single datasheet file (DTU20N10-Din-Tek.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	DTU20N10
Manufacturer	Din-Tek
File Size	338.74 KB
Description	N-Channel 100 V (D-S) MOSFET
Datasheet	DTU20N10 Datasheet

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Other Datasheets by Din-Tek

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DTU20N180	N-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

N-Channel 100 V (D-S) MOSFET DTU20N10 www.din-tek.jp PRODUCT SUMMARY VDS (V) 100 RDS(on) () Max. 0.066 at VGS = 10 V 0.080 at VGS = 4.5 V ID (A) 20 15.2 Qg (Typ.) 19.8 FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Material categorization: TO-252 D G APPLICATIONS • DC/DC Converters • DC/AC Inverters • Motor Drives GD S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (t = 300 µs) Avalanche Current Single Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range TC = 25 °C TC = 70 °C L = 0.1 mH TC = 25 °C TA = 25 °Cc VDS VGS ID IDM IAS EAS PD TJ, Tstg Limit 100 ± 20 20 15.