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DTU100N08SJ Datasheet Preview

DTU100N08SJ Datasheet

N-Channel MOSFET

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1-Channel  V (D-S)5WRGT,WPEVKQP2QYGT MOSFET
PRODUCT SUMMARY
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4J 7\S
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TO-252
FEATURES
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D
GDS
Top View
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 175 °C)b
TC = 25 °C
TC = 100 °C
ID
Pulsed Drain Current
IDM
Continuous Source Current (Diode Conduction)
IS
Avalanche Current
IAS
Single Avalanche Energy (Duty Cycle d 1 %)
L = 0.1 mH
EAS
Maximum Power Dissipation
TC = 25 °C
T% = 25 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
± 20
4
90a
560
135
140



- 55 to 175
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Case
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t d 10 s.
t d 10 sec
Steady State
Symbol
RthJA
RthJ C
Typical
1
0
0.5
Maximum
1

1.
Unit
V
A
mJ
W
°C
Unit
°C/W
1




Din-Tek

DTU100N08SJ Datasheet Preview

DTU100N08SJ Datasheet

N-Channel MOSFET

No Preview Available !

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamic
VDS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
VDS = VGS, ID = 250 μA
VDS = 0 V, VGS = ± 20 V
VDS =  V, VGS = 0 V
VDS =  V, VGS = 0 V, TJ = 125 °C
VDS = V, VGS = 0 V, TJ = 175 °C
V&S = 10 V 8)5 = 0 8
VGS = 10 V, ID = 0A
VGS = 10 V, ID = 20 A, TJ = 125 °C
VGS =  V, ID = 20 A
VDS = 64 V, ID = 0 A
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0 V, VDS = 64 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs VDS = 64 V, VGS = 10 V, ID = A
Gate-Drain Chargec
Qgd
Turn-On Delay Timec
td(on)
Rise Timec
Turn-Off Delay Timec
tr
td(off)
VDD = 64 V, RL = 0.6 :
ID # 30 A, VGEN = 10 V, Rg = 2.5 :
Fall Timec
tf
Source-Drain Diode Ratings and Characteristics (TC = 25 °C)
Pulsed Current
ISM
Diode Forward Voltage
VSD IF = 20 A, VGS = 0 V
Reverse Recovery Time
trr IF = 0 A, di/dt = 100 A/μs
Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width d 300 μs, duty cycle d 2 %.
c. Independent of operating temperature.
'7816-
ZZZGLQWHNMS
Min.


4
Typ.a
Max.

± 100
1
0
50
0.0029
0.00
0.00

0.0035
0.0
0.0
50
0


0

10
1
5

0
20
25
0

560
 1.5
5 
Unit
V
nA
μA
A
:
S
pF
nC
ns
A
V
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2


Part Number DTU100N08SJ
Description N-Channel MOSFET
Maker Din-Tek
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