900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Din-Tek

DTS7002 Datasheet Preview

DTS7002 Datasheet

N-Channel MOSFET

No Preview Available !

N-Channel 60-V (D-S) MOSFET
DTS7002
www.din-tek.jp
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
60 2.5 at VGS = 10 V
ID (mA)
200
SOT-523
G1
3D
S2
Top View
Drain
Gate
Source
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• Low On-Resistance: 2.5 Ω
• Low Threshold: 2 V (typ.)
• Low Input Capacitance: 25 pF
• Fast Switching Speed: 25 ns
• Low Input and Output Leakage
• TrenchFET II Power MOSFET
1200V ESD Protection
BENEFITS
• Low Offset Voltage
• Low-Voltage Operation
• Easily Driven Without Buffer
• High-Speed Circuits
• Low Error Voltage
APPLICATIONS
• Direct Logic-Level Interface: TTL/CMOS
• Drivers: Relays, Solenoids, Lamps, Hammers, Display,
Memories, Transistors, etc.
• Battery Operated Systems
• Solid-State Relays
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)b
Pulsed Drain Currenta
Power Dissipationb
Maximum Junction-to-Ambientb
Operating Junction and Storage Temperature Range
TA = 25 °C
TA = 100 °C
TA = 25 °C
TA = 100 °C
VDS
VGS
ID
IDM
PD
RthJA
TJ, Tstg
Notes:
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 board.
Limit
60
± 20
200
150
700
0.15
0.07
390
- 55 to 150
Unit
V
mA
W
°C/W
°C
1




Din-Tek

DTS7002 Datasheet Preview

DTS7002 Datasheet

N-Channel MOSFET

No Preview Available !

SPECIFICATIONS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 10 µA
Gate-Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = 0 V, VGS = ± 15 V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 10 V
VDS = 0 V, VGS = ± 10 V, TJ = 85 °C
VDS = 0 V, VGS = ± 5 V
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
VDS = 60 V, VGS = 0 V , TJ = 125 °C
On-State Drain Currenta
ID(on)
VGS = 10 V, VDS = 7.5 V
VGS = 4.5 V, VDS = 10 V
Drain-Source On-Resistancea
RDS(on)
VGS = 10 V, ID = 100 mA
VGS = 4.5 V, ID = 100 mA
Forward Transconductancea
gfs VDS = 10 V, ID = 100 mA
Diode Forward Voltage
VSD IS = 100 mA, VGS = 0 V
Dynamica
Total Gate Charge
Qg
VDS = 10 V, VGS = 4.5 V
ID 100 mA
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VDS = 25 V, VGS = 0 V
f = 1 MHz
Switchinga, b, c
Turn-On Time
Turn-Off Time
td(on)
td(off)
VDD = 30 V, RL = 150 Ω
ID 100 mA, VGEN = 10 V, RG = 10 Ω
Notes:
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW 300 µs duty cycle 2 %.
c. Switching time is essentially independent of operating temperature.
DTS7002
www.din-tek.jp
Min.
Limits
Typ.a
Max.
Unit
60
V
1 2.5
± 10
µA
1
± 150 nA
± 1000
± 100
1
µA
500
700
mA
300
2.5
Ω
4
100 mS
1.3 V
0.4 0.6 nC
30
6 pF
2.5
25
ns
35
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2


Part Number DTS7002
Description N-Channel MOSFET
Maker Din-Tek
PDF Download

DTS7002 Datasheet PDF






Similar Datasheet

1 DTS7001 P-Channel MOSFET
Din-Tek
2 DTS7002 N-Channel MOSFET
Din-Tek





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy