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DTS6401 - Power MOSFET

Datasheet Summary

Features

  • Isolated Package.
  • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz).
  • Sink to Lead Creepage Distance = 4.8 mm.
  • P-Channel.
  • 175 °C Operating Temperature.
  • Dynamic dV/dt Rating.
  • Low Thermal Resistance.
  • Lead (Pb)-free Available Available RoHS.

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Datasheet preview – DTS6401

Datasheet Details

Part number DTS6401
Manufacturer Din-Tek
File Size 1.36 MB
Description Power MOSFET
Datasheet download datasheet DTS6401 Datasheet
Additional preview pages of the DTS6401 datasheet.

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Full PDF Text Transcription

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Power MOSFET DTS6401 www.din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration - 60 VGS = - 10 V 12 3.8 5.1 Single 0.053 FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.
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