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Din-Tek

DTS4501 Datasheet Preview

DTS4501 Datasheet

P-Channel MOSFET

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P-Channel 40 V (D-S) 175 °C MOSFET
DTS4501
www.din-tek.jp
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = - 10 V
RDS(on) () at VGS = - 4.5 V
ID (A)
Configuration
- 40
0.083
0.110
- 3.6
Single
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• AEC-Q101 Qualifiedc
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
TO-236
(SOT-23)
S
G1
S2
3D
G
Top View
DTS4501
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
SOT-23
DTS4501
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TC = 25 °C
TC = 125 °C
ID
Continuous Source Current (Diode Conduction)
Pulsed Drain Currenta
IS
IDM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipationa
TC = 25 °C
TC = 125 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT
- 40
± 20
- 3.6
- 2.6
- 3.6
- 18
- 12
7.2
3
1
- 55 to + 175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. Parametric verification ongoing.
PCB Mountb
SYMBOL
RthJA
RthJF
LIMIT
166
50
UNIT
°C/W
1




Din-Tek

DTS4501 Datasheet Preview

DTS4501 Datasheet

P-Channel MOSFET

No Preview Available !

SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0, ID = - 250 μA
Gate-Source Threshold Voltage
Gate-Source Leakage
VGS(th)
IGSS
VDS = VGS, ID = - 250 μA
VDS = 0 V, VGS = ± 20 V
VGS = 0 V
VDS = - 40 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
ID(on)
VGS = 0 V
VGS = 0 V
VGS = - 10 V
VDS = - 40 V, TJ = 125 °C
VDS = - 40 V, TJ = 175 °C
VDS- 5 V
Drain-Source On-State Resistancea
RDS(on)
VGS = - 10 V
VGS = - 10 V
VGS = - 10 V
ID = - 3 A
ID = - 3 A, TJ = 125 °C
ID = - 3 A, TJ = 175 °C
Forward Transconductanceb
Dynamicb
VGS = - 4.5 V
ID = - 2.4 A
gfs VDS = - 5 V, ID = - 3 A
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0 V
VDS = - 25 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
Gate-Drain Chargec
Qgd
Gate Resistance
Rg
Turn-On Delay Timec
td(on)
Rise Timec
tr
Turn-Off Delay Timec
td(off)
Fall Timec
tf
Source-Drain Diode Ratings and Characteristicsb
VGS = - 10 V VDS = - 20 V, ID = - 3 A
f = 1 MHz
VDD = - 20 V, RL = 6.7
ID - 3 A, VGEN = - 10 V, Rg = 1
Pulsed Currenta
ISM
Forward Voltage
VSD IF = - 1.5 A, VGS = 0
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
MIN.
- 40
- 1.5
-
-
-
-
- 10
-
-
-
-
-
-
-
-
-
-
-
5
-
-
-
-
-
-
DTS4501
www.din-tek.jp
TYP. MAX. UNIT
-
- 2.0
-
-
-
-
-
0.071
-
-
0.100
8
-
- 2.5
± 100
-1
- 50
- 150
-
0.083
0.116
0.139
0.110
-
V
nA
μA
A
S
493 620
76 95
51 65
10.5 16
1.8 -
2.6 -
10 15
58
11 17
19 29
8 12
pF
nC
ns
-
- 0.8
- 18
- 1.2
A
V
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2


Part Number DTS4501
Description P-Channel MOSFET
Maker Din-Tek
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DTS4501 Datasheet PDF






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