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Din-Tek

DTS3406 Datasheet Preview

DTS3406 Datasheet

N-Channel MOSFET

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N-Channel 30-V (D-S) MOSFET
DTS3406
www.din-tek.jp
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.021 at VGS = 10 V
30
0.023 at VGS = 4.5 V
ID (A)a
5.8
4.6
Qg (Typ.)
1.9 nC
SOT-23
G1
S2
3D
Top View
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC Converter
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Limit
30
± 20
5.8a
4.1
5.3
4.7
17
5.2
0.9b, c
1.7
1.1
1.1b, c
0.7b, c
- 55 to 150
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
t5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Package limited
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 130 °C/W.
Symbol
RthJA
RthJF
Typical
90
60
Maximum
115
75
Unit
V
A
W
°C
Unit
°C/W
1




Din-Tek

DTS3406 Datasheet Preview

DTS3406 Datasheet

N-Channel MOSFET

No Preview Available !

DTS3406
www.din-tek.jp
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
ID = 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS , ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currenta
ID(on)
VDS 5 V, VGS = 10 V
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 3.2 A
VGS = 4.5 V, ID = 2.8 A
Forward Transconductancea
gfs VDS = 15 V, ID = 4.8 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 15 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = 15 V, VGS = 10 V, ID = 3.4 A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing.
VDS = 15 V, VGS = 4.5 V, ID = 3.4 A
f = 1 MHz
VDD = 15 V, RL = 5.6 Ω
ID 2.7 A, VGEN = 4.5 V, Rg = 1 Ω
VDD = 15 V, RL = 5.6 Ω
ID 2.7 A, VGEN = 10 V, Rg = 1 Ω
TC = 25 °C
IS = 2.7 A, VGS = 0 V
IF = 2.7 A, dI/dt = 100 A/µs, TJ = 25 °C
Min.
30
1.2
10
0.8
Typ. Max. Unit
31
-5
0.021
0.023
11
V
mV/°C
2.2
± 100
1
10
0.025
0.034
V
nA
µA
A
Ω
S
235
45
17
4.5 6.7
2.1 3.2
0.85
0.65
4.4 8.8
12 20
50 75
12 20
22 35
5 10
12 20
10 15
5 10
4.8
17
0.8 1.2
10 20
5 10
6
4
pF
nC
Ω
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2


Part Number DTS3406
Description N-Channel MOSFET
Maker Din-Tek
Total Page 9 Pages
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