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Din-Tek

DTS2318 Datasheet Preview

DTS2318 Datasheet

N-Channel MOSFET

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N-Channel 20-V (D-S) MOSFET
DTS
www.din-tek.jp
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0095 at VGS = 10 V
20
0.0105 at VGS = 4.5 V
ID (A)a, g
12
10
Qg (Typ.)
7.3 nC
(SOT-23)
G1
S2
3D
Top View
D
G
S
N-Channel MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Gen III Power MOSFET
• 100 % Rg Tested
100 % UIS Tested
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC Conversion
• POL
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Avalanche Current
Avalanche Energy
Continuous Source-Drain Diode Current
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
L = 0.1 mH
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IAS
EAS
IS
PD
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TJ, Tstg
Limit
20
± 12
12a, g
10g
11.3b, c
10.3b, c
36g
15
11.25
12a, g
2.9b, c
27.7
17.7
3.5b, c
2.2b, c
- 55 to 150
260
Unit
V
A
mJ
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
Symbol
RthJA
RthJC
Typical
29
3.6
Maximum
36
4.5
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 81 °C/W.
g. Package limited.
1




Din-Tek

DTS2318 Datasheet Preview

DTS2318 Datasheet

N-Channel MOSFET

No Preview Available !

DTS
www.din-tek.jp
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
ID = 250 µA
VDS = VGS , ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
ID(on)
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 10 V
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
VGS = 10 V, ID = 10 A
VGS = 4.5 V, ID = 7 A
VDS = 10 V, ID = 10 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = 10 V, VGS = 10 V, ID = 10 A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
VDS = 15 V, VGS = 4.5 V, ID = 10 A
f = 1 MHz
VDD = 10 V, RL = 2 Ω
ID 5 A, VGEN = 4.5 V, Rg = 1 Ω
VDD = 10 V, RL = 2 Ω
ID 5 A, VGEN = 10 V, Rg = 1 Ω
TC = 25 °C
IS = 3 A, VGS = 0 V
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
Min.
20
0.5
12
0.2
Typ. Max. Unit
22
- 5.0
0.0095
0.0105
26
1.0
± 100
1
5
0.0105
0.0120
V
mV/°C
V
nA
µA
A
Ω
S
880
310
125
15 23
7.3 11
2.2
2.1
0.9 1.8
15 30
11 22
16 30
8 16
10 20
8 16
16 30
7 14
0.77
14
4.5
5.5
8.5
12
36
1.2
28
9
pF
nC
Ω
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2


Part Number DTS2318
Description N-Channel MOSFET
Maker Din-Tek
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DTS2318 Datasheet PDF






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