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N-Channel 30 V (D-S) MOSFET
DTQ3306
www.din-tek.jp
PRODUCT SUMMARY
VDS (V)
RDS(on) (mΩ )(Typ.)
30
7.3 at VGS = 10 V
10.2at VGS = 4.5 V
ID (A)a Qg (Typ.)
45
23 nC
DFN 3x3 EP
Top View
Pin 1
Bottom View
FEATURES • DT-Trench Power MOSFET • 100 % Rg and UIS Tested
APPLICATIONS
• 0QVGDQQM2%%QTG • 84/21.
Top View
1
8
2
7
3
6
4
5
D
G S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
30
V
VGS
± 20
Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current
TC = 25 °C TC = 70 °C
ID
IDM
45
37
A
135
Single-Pulse Avalanche Energy
L = 0.1 mH
EAS
49
mJ
TC = 25 °C
28.5
Maximum Power Dissipation
TC = 70 °C TA = 25 °C
PD
19.95
3.
DTQ3306 Datasheet
