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DTL15N10 - N-Channel MOSFET

Key Features

  • TrenchFET® Power.

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Datasheet Details

Part number DTL15N10
Manufacturer Din-Tek
File Size 343.59 KB
Description N-Channel MOSFET
Datasheet download datasheet DTL15N10 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DTU15N10/DTL15N10 N-Channel 100 V (D-S) MOSFET www.din-tek.jp PRODUCT SUMMARY VDS (V) 100 RDS(on) () 0.095 at VGS = 10 V 0.100 at VGS = 6 V TO-251 ID (A) 15 15 FEATURES • TrenchFET® Power MOSFETS • 175 °C Junction Temperature • 100 % Rg Tested APPLICATIONS • Primary Side Switch TO-252 D GDS Top View GDS Top View G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Continuous Source Current (Diode Conduction) IS Avalanche Current IAR Repetitive Avalanche Energy (Duty Cycle  1 %) L = 0.