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DTL15N10 Datasheet Preview

DTL15N10 Datasheet

N-Channel MOSFET

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DTU15N10/DTL15N10
N-Channel 100 V (D-S) MOSFET
www.din-tek.jp
PRODUCT SUMMARY
VDS (V)
100
RDS(on) ()
0.095 at VGS = 10 V
0.100 at VGS = 6 V
TO-251
ID (A)
15
15
FEATURES
• TrenchFET® Power MOSFETS
• 175 °C Junction Temperature
• 100 % Rg Tested
APPLICATIONS
• Primary Side Switch
TO-252
D
GDS
Top View
GDS
Top View
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 175 °C)b
TC = 25 °C
TC = 125 °C
ID
Pulsed Drain Current
IDM
Continuous Source Current (Diode Conduction)
IS
Avalanche Current
IAR
Repetitive Avalanche Energy (Duty Cycle 1 %)
L = 0.1 mH
EAR
Maximum Power Dissipation
TC = 25 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
100
± 20
15
8.7
45
15
15
11.3
62b
2.7a
- 55 to 175
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambienta
Junction-to-Case
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. See SOA curve for voltage derating.
t 10 s
Steady State
Symbol
RthJA
RthJC
Typical
16
45
2
Maximum
20
55
2.4
Unit
°C/W
1




Din-Tek

DTL15N10 Datasheet Preview

DTL15N10 Datasheet

N-Channel MOSFET

No Preview Available !

DTU15N10/DTL15N10
www.din-tek.jp
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamica
VDS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = 100 V, VGS = 0 V
VDS = 100 V, VGS = 0 V, TJ = 125 °C
VDS = 100 V, VGS = 0 V, TJ = 175 °C
VDS =5 V, VGS = 10 V
VGS = 10 V, ID = 15 A
VGS = 10 V, ID = 15 A, TJ = 125 °C
VGS = 10 V, ID = 15 A, TJ = 175 °C
VGS = 6 V, ID = 10 A
VDS = 15 V, ID = 15 A
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs VDS = 75 V, VGS = 10 V, ID = 15 A
Gate-Drain Chargec
Qgd
Gate Resistance
Rg
Turn-On Delay Timec
td(on)
Rise Timec
Turn-Off Delay Timec
tr
td(off)
VDD = 75 V, RL = 5
ID 15 A, VGEN = 10 V, RG = 2.5
Fall Timec
tf
Source-Drain Diode Ratings and Characteristic (TC = 25 °C)
Pulsed Current
ISM
Diode Forward Voltageb
VSD IF = 15 A, VGS = 0 V
Source-Drain Reverse Recovery Time
trr
IF = 15 A, dI/dt = 100 A/µs
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 µs, duty cycle 2 %.
c. Independent of operating temperature.
Min.
100
1
15
1
Typ.a
Max.
3
± 100
1
50
250
0.095
0.100
25
0.110
0.190
0.250
0.115
900
115
70
20 25
5.5
7
3.2
8 12
35 55
17 25
30 45
45
0.9 1.5
55 85
Unit
V
nA
µA
A
S
pF
nC
ns
A
V
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2


Part Number DTL15N10
Description N-Channel MOSFET
Maker Din-Tek
Total Page 8 Pages
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