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Digitron Semiconductors

MCR8SD Datasheet Preview

MCR8SD Datasheet

SILICON CONTROLLED RECTIFIERS

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MCR8SD, MCR8SM, MCR8SN
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIERS
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak repetitive off-state voltage(1)
Peak repetitive reverse voltage
(TJ = -40 to +110°C, sine wave, 50 to 60Hz, gate open)
MCR8SD
MCR8SM
MCR8SN
VDRM
VRRM
400
600
800
V
On-state RMS current (180° conduction angles, TC = 80°C)
IT(RMS)
8
A
Peak non-repetitive surge current
(one half-cycle, sine wave, 60Hz, TJ = 110°C)
Circuit fusing (t = 8.3ms)
ITSM 80
A
I2t 26.5 A2s
Forward peak gate power (pulse width ≤ 1.0µs, TC = 80°C)
PGM 5
W
Forward average gate power (t = 8.3ms, TC = 80°C)
PG(AV)
0.5
W
Forward peak gate current (pulse width ≤ 1.0µs, TC = 80°C) IGM 2
A
Operating temperature range
TJ -40 to +110 °C
Storage temperature range
Tstg -40 to +150
°C
Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative
potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Maximum lead temperature for soldering purposes
1/8” from case for 10s
Symbol
RӨJC
RӨJA
TL
Maximum
2.2
62.5
260
Unit
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Characteristic
OFF CHARACTERISTICS
Peak forward blocking current or reverse blocking current(2)
(VD = Rated VDRM or VRRM, RGK = 1kΩ)
TJ = 25°C
TJ = 110°C
ON CHARACTERISTICS
Peak on-state voltage(3)
(ITM = 16A)
Gate trigger current (continuous dc) (4)
(VD = 12V, RL = 100Ω)
Symbol
IDRM,
IRRM
VTM
IGT
Min Typ Max Unit
- - 10 µA
- - 500
- - 1.8 V
5.0 25 200 µA
Rev. 20121228




Digitron Semiconductors

MCR8SD Datasheet Preview

MCR8SD Datasheet

SILICON CONTROLLED RECTIFIERS

No Preview Available !

High-reliability discrete products
and engineering services since 1977
Characteristic
Holding current (4)
(VD = 12V, gate open, initiating current = 200mA)
Latch current (4)
(VD = 12V, IG = 200µA)
Gate trigger voltage (continuous dc) (4)
(VD = 12V, RL = 100Ω)
TJ = 25°C
TJ = -40°C
DYNAMIC CHARACTERISTICS
Critical rate of rise of off-state voltage
(VD = 67% VDRM, RGK = 1KΩ, CGK = 0.1µF, TJ = 110°C)
Critical rate of rise of on-state current
(IPK = 50A, PW = 40µsec, diG/dt = 1 A/µsec, Igt = 10mA)
* Pulse width≤ 2.0ms, duty cycle ≤ 2%.
MECHANICAL CHARACTERISTICS
Case TO-220AB
Marking
Alpha-numeric
Pin out
See below
MCR8SD, MCR8SM, MCR8SN
SILICON CONTROLLED RECTIFIERS
Symbol
IH
IL
VGT
dv/dt
di/dt
Min Typ Max
- 0.5 6.0
- 0.6 8.0
0.3 0.65 1.0
- - 1.5
Unit
mA
mA
V
5.0 15 - V/µs
- - 100 A/µs
Rev. 20121228


Part Number MCR8SD
Description SILICON CONTROLLED RECTIFIERS
Maker Digitron Semiconductors
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MCR8SD Datasheet PDF






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