900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Digitron Semiconductors

MCR65-7 Datasheet Preview

MCR65-7 Datasheet

SILICON CONTROLLED RECTIFIERS

No Preview Available !

MCR65 SERIES
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIERS
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak repetitive forward and reverse voltage(1)
(TJ = 25 to +125°C, gate open)
MCR65-1
MCR65-2
MCR65-3
MCR65-4
MCR65-5
MCR65-6
MCR65-7
MCR65-8
MCR65-9
MCR65-10
VRRM, VDRM
25
50
100
200
300
400
500
600
700
800
Volts
Non-repetitive peak reverse blocking voltage
(t ≤ 5ms) (1)
MCR65-1
MCR65-2
MCR65-3
MCR65-4
MCR65-5
MCR65-6
MCR65-7
MCR65-8
MCR65-9
MCR65-10
35
75
150
VRSM
300
400
Volts
500
600
700
800
900
Forward current RMS
IT(RMS)
55 Amps
Peak surge current
(one cycle, 60Hz, TC = -40 to +125°C)
Circuit fusing considerations
(t = 8.3ms)
ITSM 550 Amps
I2t
1255
A2s
Peak gate power
PGM 20 Watts
Average gate power (Pulse width ≤ 2µs)
PG(AV)
0.5 Watts
Peak forward gate current
IGM 2 Amps
Forward peak gate voltage
Reverse peak gate voltage
VGFM
VGRM
10 Volts
Operating junction temperature range
TJ
-40 to +125
°C
Storage temperature range
Tstg
-40 to +150
°C
Mounting torque
30 In. lb.
Note 1: VDRM and VRRM for all types can be applied on a continuous basis without incurring damage. Ratings apply for zero or negative gate voltage. Devices shall not have a positive bias applied
to the gate concurrently with a negative potential on the anode.
Rev. 20130128




Digitron Semiconductors

MCR65-7 Datasheet Preview

MCR65-7 Datasheet

SILICON CONTROLLED RECTIFIERS

No Preview Available !

MCR65 SERIES
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIERS
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Isolated stud
Symbol
RӨJC
Maximum
1.1
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Characteristic
Peak forward or reverse blocking current
(VAK = Rated VDRM or VRRM, gate open)
TC = 25°C
TC = 125°C
Forward “on” voltage
(ITM = 175A peak)
Gate trigger current (continuous dc)
(VD = 12V, RL = 50Ω)
TC = 25°C
TC = -40°C
Gate trigger voltage (continuous dc)
(VD = 12V, RL = 50Ω)
TC = 25°C
TC = -40°C
(VD = Rated VDRM, RL = 1000Ω, TJ = 125°C)
Holding current
(VD = 12V, RL = 50Ω, gate open)
Forward voltage application rate
(VD = rated VDRM, TJ = 125°C)
Symbol
IDRM, IRRM
VTM
IGT
VGT
IH
dv/dt
Min.
-
-
-
-
-
-
-
0.2
-
50
Unit
°C/W
Max.
10
2
2
40
75
3
3.5
-
60
-
Unit
µA
mA
Volts
mA
Volts
mA
V/µs
Rev. 20130128


Part Number MCR65-7
Description SILICON CONTROLLED RECTIFIERS
Maker Digitron Semiconductors
Total Page 3 Pages
PDF Download

MCR65-7 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 MCR65-1 Thyristor SCR 50V 100A 3-Pin(3+Tab) TO-220AB Box
New Jersey Semiconductor
2 MCR65-1 SILICON CONTROLLED RECTIFIERS
Digitron Semiconductors
3 MCR65-10 Thyristor SCR 50V 100A 3-Pin(3+Tab) TO-220AB Box
New Jersey Semiconductor
4 MCR65-10 SILICON CONTROLLED RECTIFIERS
Digitron Semiconductors
5 MCR65-10A SILICON CONTROLLED RECTIFIERS
Motorola
6 MCR65-2 Thyristor SCR 50V 100A 3-Pin(3+Tab) TO-220AB Box
New Jersey Semiconductor
7 MCR65-2 SILICON CONTROLLED RECTIFIERS
Digitron Semiconductors
8 MCR65-2A SILICON CONTROLLED RECTIFIERS
Motorola
9 MCR65-3 Thyristor SCR 50V 100A 3-Pin(3+Tab) TO-220AB Box
New Jersey Semiconductor





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy