C35 SERIES
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIER
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Symbol
RӨJC
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Peak reverse or forward blocking current
(VD = Rated VDRM, TC = 125°C)
(VR = Rated VRRM, TC = 125°C)
C35U,F, A, G
C35B
C35H
C35C
C35D
C35E
C35M
C35S
C35N
Average forward or reverse blocking current
(VD = Rated VDRM, TC = 125°C)
(VR = Rated VRRM, TC = 125°C)
C35U,F, A, G
C35B
C35H
C35C
C35D
C35E
C35M
C35S
C35N
Peak on-state voltage
(ITM = 50.3A peak, pulse width ≤ 1ms, duty cycle ≤ 2.0%)
Gate trigger current (continuous dc)
(VD = 12V, RL = 50Ω)
(VD = 12V, RL = 50Ω, TC = -65°C)
Gate trigger voltage (continuous dc)
(VD = 12V, RL = 50Ω, TC = -65°C to +125°C)
(VD = Rated VDRM, RL = 1000Ω, TC = 125°C)
Holding current
(VD = 24V, gate supply = 10V, 20Ω, 45µs minimum pulse width, IT = 0.5A)
Critical rate of rise of forward blocking voltage
(VD = Rated VDRM, TC = 125°C)
C35U, F, M, S, N
C35A, G, B, H
C35C, D, E
Maximum
1.7
Unit
°C/W
Symbol Min Typ. Max
Unit
IDRM or
IRRM
-
-
-
-
-
-
-
-
-
- 13
- 12
- 11
- 10
-8
-6
-5
- 4.5
-4
mA
IDRM(AV) or
IRRM(AV)
VTM
-
-
-
-
-
-
-
-
-
-
- 6.5
-6
- 5.5
-5
-4
-3
- 2.5
- 2.25
-2
-2
IGT - 6 40
- - 80
VGT - -
0.25 -
3
-
IH - - 100
mA
Volts
mA
Volts
mA
dv/dt 10 -
20 -
25 -
-
-
-
V/µs
Rev. 20150306
