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Digitron Semiconductors

C35C Datasheet Preview

C35C Datasheet

SILICON CONTROLLED RECTIFIER

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C35 SERIES
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIER
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Peak repetitive forward and reverse blocking voltage(1)
(TC = -65 to +125°C)
C35U
C35F
C35A
C35G
C35B
C35H
C35C
C35D
C35E
C35M
C35S
C35N
Non-repetitive peak reverse voltage
(TC = -65 to +125°C, V < 5.0ms)
C35U
C35F
C35A
C35G
C35B
C35H
C35C
C35D
C35E
C35M
C35S
C35N
Forward current RMS (all conduction angles)
Peak non-repetitive surge current (1cycle, 60 Hz)
Circuit fusing considerations (t = 8.3ms)
Forward peak gate power
Forward average gate power
Peak reverse gate voltage
Operating junction temperature range
Storage temperature range
Symbol
Value
VDRM or VRRM
25
50
100
150
200
250
300
400
500
600
700
800
VRSM
IT(RMS)
ITSM
I2t
PGM
PG(AV)
VGRM
TJ
Tstg
35
75
150
225
300
350
400
500
600
720
840
960
35
225
75
5
0.5
5
-65 to +125
-65 to +150
Unit
Volts
Volts
Amps
Amps
A2s
Watts
Watts
Volts
°C
°C
Rev. 20150306




Digitron Semiconductors

C35C Datasheet Preview

C35C Datasheet

SILICON CONTROLLED RECTIFIER

No Preview Available !

C35 SERIES
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIER
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Symbol
RӨJC
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Peak reverse or forward blocking current
(VD = Rated VDRM, TC = 125°C)
(VR = Rated VRRM, TC = 125°C)
C35U,F, A, G
C35B
C35H
C35C
C35D
C35E
C35M
C35S
C35N
Average forward or reverse blocking current
(VD = Rated VDRM, TC = 125°C)
(VR = Rated VRRM, TC = 125°C)
C35U,F, A, G
C35B
C35H
C35C
C35D
C35E
C35M
C35S
C35N
Peak on-state voltage
(ITM = 50.3A peak, pulse width ≤ 1ms, duty cycle ≤ 2.0%)
Gate trigger current (continuous dc)
(VD = 12V, RL = 50Ω)
(VD = 12V, RL = 50Ω, TC = -65°C)
Gate trigger voltage (continuous dc)
(VD = 12V, RL = 50Ω, TC = -65°C to +125°C)
(VD = Rated VDRM, RL = 1000Ω, TC = 125°C)
Holding current
(VD = 24V, gate supply = 10V, 20Ω, 45µs minimum pulse width, IT = 0.5A)
Critical rate of rise of forward blocking voltage
(VD = Rated VDRM, TC = 125°C)
C35U, F, M, S, N
C35A, G, B, H
C35C, D, E
Maximum
1.7
Unit
°C/W
Symbol Min Typ. Max
Unit
IDRM or
IRRM
-
-
-
-
-
-
-
-
-
- 13
- 12
- 11
- 10
-8
-6
-5
- 4.5
-4
mA
IDRM(AV) or
IRRM(AV)
VTM
-
-
-
-
-
-
-
-
-
-
- 6.5
-6
- 5.5
-5
-4
-3
- 2.5
- 2.25
-2
-2
IGT - 6 40
- - 80
VGT - -
0.25 -
3
-
IH - - 100
mA
Volts
mA
Volts
mA
dv/dt 10 -
20 -
25 -
-
-
-
V/µs
Rev. 20150306


Part Number C35C
Description SILICON CONTROLLED RECTIFIER
Maker Digitron Semiconductors
PDF Download

C35C Datasheet PDF






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