High-reliability discrete products
and engineering services since 1977
ELECTRICAL CHARACTERISTICS
Characteristic
Peak off-state and reverse current
C147A
C147B
C147C
C147D
C147E
C147M
C147S
C147N
C147T
C147P
C147PA
C147PB
DC gate trigger current
DC gate trigger voltage
Peak on-state voltage
Holding current
Critical rate of rise of off-state voltage
(higher values may cause device switching)
Thermal resistance
Typical turn-off time
C147A-C147PB
SILICON CONTROLLED RECTIFIERS
Symbol
IDRM,
IRRM
IGT
VGT
VTM
IH
dv/dt
RӨJC
tq
Min Max
- 12
- 12
- 12
- 10
- 10
- 10
- 10
-9
-8
-7
- 6.5
-6
- 150
- 300
-3
- 3.5
0.25 -
-3
- 250
200 -
- 0.35
125
Units
mA
mAdc
Vdc
V
mAdc
V/µs
°C/W
µsec
Test Condition
TJ = -40 to 125°C
VDRM = VRRM =
100 Volts peak
200 Volts peak
300 Volts peak
400 Volts peak
500 Volts peak
600 Volts peak
700 Volts peak
800 Volts peak
900 Volts peak
1000 Volts peak
1100 Volts peak
1200 Volts peak
TC = 25°C, VD = 12Vdc, RL = 12ohms
TC = -40°C, VD = 12Vdc, RL = 12ohms
TC = 25°C, VD = 12Vdc, RL = 12ohms
TC = -40°C, VD = 12Vdc, Rl = 12ohms
TC = 125°C, rated VDRM, RL = 1000ohms
TC = 25°C, ITM = 500A(pk), 1ms wide pulse, duty
cycle ≤ 1%
TC = 25°C anode supply = 24Vdc, gate supply =
10V/20ohms.
Initial forward pulse = 2A, 0.1 ms to 10 ms
wide
TC = 125°C, rated VDRM, using linear
exponential rising waveform, gate open
circuited
Exponential dv/dt = VDRM / т) (0.632)
Junction to case
1) TJ = 125°C
2) ITM = 150A, peak
3) VR = 50V, min
4) VDRM (reapplied)
5) Rate-of-rise of reapplied off state
voltage = 20V/µsec (linear)
6) Commutation di/dt = 5A/µsec
7) Repetition rate = 1PPS
8) Gate bias during turn-off
interval = 0V, 100Ω
Rev. 20130116
