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Digitron Semiconductors

C147M Datasheet Preview

C147M Datasheet

SILICON CONTROLLED RECTIFIERS

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C147A-C147PB
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIERS
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
.
Part number
Repetitive peak off-state
voltage
VDRM1
Repetitive peak
reverse voltage
VRRM1
Non-repetitive peak
reverse voltage
VRSM1
C147A
TJ = -40° to 125°C
100
TJ = -40°C to 125°C
100
TJ = 125°C
150
C147B
200 200 300
C147C
300 300 400
C147D
400 400 500
C147E
500 500 600
C147M
600 600 720
C147S
700 700 840
C147N
800 800 960
C147T
900 900 1080
C147P
1000
1000
1200
C147PA
1100
1100
1320
C147PB
1: Pulse width: half sine wave waveform, 10 msec.
1200
1200
1440
Rating
Symbol
Value
RMS on-state current
(All conduction angles)
IT(RMS)
63
Average on-state current
Critical rate of rise of on-state current (non-repetitive)
Switching from 1200V
Switching from 600V
IT(AV)
di/dt
Figures 2 and 3
100
200
Peak one cycle surge (non-repetitive) on-state current
60Hz
ITSM 1000
50Hz
910
Fusing
Times ≥ 8.3ms
Times ≥ 1.5ms
I2t 4150
2850
Peak gate power dissipation for 150µs
PGM 100
Average gate power dissipation
PG(AV)
2
Storage temperature
Tstg -40 to 150
Operating temperature
TJ -40 to 125
Maximum stud torque
3-4
di/dt ratings for conditions of VDRM stated above; 20V, 20Ω gate trigger source with 0.5µsec short circuit trigger current rise time.
Units
V
V
V
V
V
V
V
V
V
V
V
V
Unit
A
A/µs
A
A2s
W
W
°C
°C
N-m
Rev. 20130116




Digitron Semiconductors

C147M Datasheet Preview

C147M Datasheet

SILICON CONTROLLED RECTIFIERS

No Preview Available !

High-reliability discrete products
and engineering services since 1977
ELECTRICAL CHARACTERISTICS
Characteristic
Peak off-state and reverse current
C147A
C147B
C147C
C147D
C147E
C147M
C147S
C147N
C147T
C147P
C147PA
C147PB
DC gate trigger current
DC gate trigger voltage
Peak on-state voltage
Holding current
Critical rate of rise of off-state voltage
(higher values may cause device switching)
Thermal resistance
Typical turn-off time
C147A-C147PB
SILICON CONTROLLED RECTIFIERS
Symbol
IDRM,
IRRM
IGT
VGT
VTM
IH
dv/dt
RӨJC
tq
Min Max
- 12
- 12
- 12
- 10
- 10
- 10
- 10
-9
-8
-7
- 6.5
-6
- 150
- 300
-3
- 3.5
0.25 -
-3
- 250
200 -
- 0.35
125
Units
mA
mAdc
Vdc
V
mAdc
V/µs
°C/W
µsec
Test Condition
TJ = -40 to 125°C
VDRM = VRRM =
100 Volts peak
200 Volts peak
300 Volts peak
400 Volts peak
500 Volts peak
600 Volts peak
700 Volts peak
800 Volts peak
900 Volts peak
1000 Volts peak
1100 Volts peak
1200 Volts peak
TC = 25°C, VD = 12Vdc, RL = 12ohms
TC = -40°C, VD = 12Vdc, RL = 12ohms
TC = 25°C, VD = 12Vdc, RL = 12ohms
TC = -40°C, VD = 12Vdc, Rl = 12ohms
TC = 125°C, rated VDRM, RL = 1000ohms
TC = 25°C, ITM = 500A(pk), 1ms wide pulse, duty
cycle ≤ 1%
TC = 25°C anode supply = 24Vdc, gate supply =
10V/20ohms.
Initial forward pulse = 2A, 0.1 ms to 10 ms
wide
TC = 125°C, rated VDRM, using linear
exponential rising waveform, gate open
circuited
Exponential dv/dt = VDRM / т) (0.632)
Junction to case
1) TJ = 125°C
2) ITM = 150A, peak
3) VR = 50V, min
4) VDRM (reapplied)
5) Rate-of-rise of reapplied off state
voltage = 20V/µsec (linear)
6) Commutation di/dt = 5A/µsec
7) Repetition rate = 1PPS
8) Gate bias during turn-off
interval = 0V, 100Ω
Rev. 20130116


Part Number C147M
Description SILICON CONTROLLED RECTIFIERS
Maker Digitron Semiconductors
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C147M Datasheet PDF






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