C122 SERIES
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIERS
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Characteristics
C122F
C122A
C122B
C122C
C122D
VRROM VDROM
50 100 200 300 400
IT(RMS) (TC = 75°C, θ = 180°)
8
ITSM for one full cycle of applied principal
voltage
400 Hz
60 Hz
50 Hz
200
100
85
di/dt
I2t
VD = VDROM, IGT = 80mA, tr = 0.5µs
TJ = -65 to +100°C, t = 1 to 8.3 ms
100
40
PGM * (for 10µs max)
16
PG(AV) * (averaging time = 10 ms max)
0.5
Tstg -65 to +150
TC -65 to +100
TT During soldering for 10 s maximum
250
These values do not apply if there is a positive gate signal. Gate must be open or negatively biased.
* Any values of peak gate current or peak gate voltage which result in equal or lower power are permissible.
C122E
500
C122M
600
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
Characteristics
IDOM or IROM
VD = VDROM or VR = VRROM, TC = 100°C
VT
IT = 16A, TC = 25°C
IGT
VD = 12V (DC), RL = 30Ω, TC = 25°C
VGT
VD = 12V (DC), RL = 30Ω, TC = 25°C
IHO
TC = 25°C
dv/dt
VD = VDROM exponential voltage rise, TC = 100°C
tgt
VD = VDROM, IT = 4.5A, IT = 2A, IGT = 80mA, 0.1 µs rise time, TC = 25°C
tq
VD = VDROM, IT = 2A, tp = 50µs, dv/dt = 200V/µs,
di/dt = -10A/µs, IGT = 200mA @ tON, TC = 75°C
RθJC
RθJA
Limits
Min Typ Max
- 0.1 0.5
- 1.45 1.83
- 10 15
- 1.0 1.5
- 20 30
10 100
-
- 1.6 2.5
- 10 35
- - 1.8
- - 75
Units
V
A
A
A/µs
A2s
W
W
°C
°C
°C
Units
mA
V
mA
V
mA
V/µs
µs
µs
°C/W
Rev. 20130123
