2N6299 Datasheet | Digitron Semiconductors

2N6298, 2N6299 High-reliability discrete products and engineering services since 1977 PNP SILICON DARLINGTON POWER TRANSISTORS Features - Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. - Available Non-Ro HS (standard) or Ro HS pliant (add PBF suffix). MAXIMUM RATINGS Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Base current Collector current Total power dissipation TC = 0°C (1) TC = 100°C Operating and storage temperature range Thermal resistance, junction to case Note 1: Derate linearly 0.428W/°C above TC > 0°C. Symbol VCEO VCBO VEBO IB IC TJ, Tstg RӨJC 2N6298 60 60 5.0 120 8.0 75 32 -65 to +175 2.33 2N6299 80 80 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Parameter Symbol Min OFF CHARACTERISTICS Collector emitter breakdown voltage IC = 100m A 2N6298 2N6299 V(BR)CEO Collector emitter cutoff current VCE = 30V 2N6298 ICEO - VCE = 40V - Collector emitter cutoff current VCE = 60V, VBE =...