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2N2647 - SILICON UNIJUNCTION TRANSISTOR

Download the 2N2647 datasheet PDF. This datasheet also covers the 2N2646 variant, as both devices belong to the same silicon unijunction transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
  • Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N2646-DigitronSemiconductors.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2N2647
Manufacturer Digitron Semiconductors
File Size 413.57 KB
Description SILICON UNIJUNCTION TRANSISTOR
Datasheet download datasheet 2N2647 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2N2646, 2N2647 High-reliability discrete products and engineering services since 1977 SILICON UNIJUNCTION TRANSISTOR FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Symbol Value Unit Power dissipation(1) PD 300 mW RMS emitter current IE(EMS) 50 mA Peak pulse emitter current (2) IE 2 Amps Emitter reverse voltage VB2E 30 Volts Interbase voltage VB2B1 35 Volts Operating junction temperature range TJ -65 to 125 °C Storage temperature range Tstg -65 to 150 °C Note 1: Derate 3mW/°C increase in ambient temperature.
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