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Technical Data DIODE
maximum ratings
Voltage, Reverse (VR) Voltage, Reverse Peak (VRM) Current at VR = OV (IO) Current Average Rectified (IF) Current Surge Peak (IFM) Current, Surge (IFM) at tp = 10 ms Max. Power Dissipation (PT) at TC = °C Max. Thermal Resistance (Rth J-A) Max. Junction Temperature (TJ)
800.0 V
960.0 V
empty
A
2.0 A
6.5 A
70.0 A
empty
W
70.0 °C/W
175.0 °C
NO. TYPE empty empty CASE empty empty
1N3941 SILICON CONTROLLED AVALANCHE DO-13 empty empty
PERFORMANCE CHARACTERISTICS at T = 25°C, unless otherwise noted
C
NO. SYMBOL
CONDITIONS
MIN.
MAX.
UNITS
1. VF
IF = 2.0 A
(1) - 1.1 V
2. IR
VR = 800.0 V
- 5.0 µA
3. IR
VR = 800.0 V, TC = 150.0° C
-
500.0
µA
4. VBR
IR = 50.0 µA
960.0
1400.0
V
5. PRSM
tp = 10.0 µs
- 3.0 kW
6.
7.
8.
9.
10.
1N3941 Datasheet
