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Technical Data TRANSISTOR
maximum ratings
Voltage, Collector to Base (VCBO) Voltage, Collector to Emitter (VCE) Voltage, Emitter to Base (VEBO) Collector Current (IC) Base Current (IB) Max. Power Dissipation (PT) at TC = 25 °C Max. Thermal Resistance (Rth J-C) Max. Junction Temperature (TJ) empty
300.0 V 180.0 V
10.0 V 6.0 A 3.0 A
87.5 W 2.0 °C/W
200.0 °C empty empty
NO. TYPE empty empty CASE empty empty
183T2B NPN empty empty TO-3 empty empty
PERFORMANCE CHARACTERISTICS at T = 25°C, unless otherwise noted
C
NO. SYMBOL
CONDITIONS
MIN.
MAX.
UNITS
1. BVCEO
IC = 50.0 mA
(1) 180.0
-
V
2. BVCBO
IE = 3.0 mA
(1) 300.0
-
V
3. ICEO
VCE = 180.0 V
- 1.0 mA
4. ICES
VCE = 250.0 V
- 1.0 mA
5. IEBO
VEB = 10.0 V
- 1.0 mA
6. hFE
IC = 2.0 A, VCE = 4.0 V
(1) 30.0
90.0
-
7.
183T2B Datasheet
