ZXTN19020DFF transistor equivalent, npn high gain power transistor.
* BVCEO > 20V
* IC = 6.5A Continuous Collector Current
* Very Low Saturation Voltage VCE(sat) < 30mV @ 1A
* RCE(sat) = 18mΩ
* High hFE Min 260 @ 2A
where power density is of utmost importance.
Mechanical Data
* Case: SOT23F
* Case Material: Molded Plastic. “G.
Advanced process capability has been used to maximize the performance of this transistor. The SOT23F package is compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 421.75KB)