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ZXTC6718MCQ - 20V TRANSISTORS

General Description

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications.

Case: W-DFN3020-8 (Type B)

Case Material: Molded Plastic, “Green” Molding Compound.

Moisture Sensitivity: Level 1 per J-ST

Key Features

  • C1 NPN Transistor.
  • BVCEO > 20V.
  • IC = 4.5A Continuous Collector Current.
  • Low Saturation Voltage (150mV Max @ 1A).
  • RSAT = 47mΩ for a Low Equivalent On-Resistance PNP Transistor.
  • BVCEO > -20V.
  • IC = -3.5A Continuous Collector Current.
  • Low Saturation Voltage (-220mV Max @ -1A).
  • RSAT = 64mΩ for a Low Equivalent On-Resistance hFE Characterized up to 6A for High Current Gain Hold Up Low Profile 0.8mm Hi.

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ZXTC6718MCQ 20V COMPLEMENTARY LOW SATURATION TRANSISTORS Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications. Mechanical Data  Case: W-DFN3020-8 (Type B)  Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish – NiPdAu, Solderable per MIL-STD-202, Method 208 e4  Weight: 0.013 grams (Approximate) Applications  DC-DC Converters  Charging Circuits  Power Switches  Motor Control  LED Backlighting Circuits  Portable Applications W-DFN3020-8 (Type B) Features           C1 NPN Transistor  BVCEO > 20V  IC = 4.