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ZXMN10B08E6 - 100V N-CHANNEL MOSFET

Description

This MOSFET utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed.

This makes it ideal for high-efficiency, low-voltage, power-management applications.

DC-DC converters Power-management functions Disconnect switches

Features

  • Low On-Resistance.
  • Fast Switching Speed.
  • Low Threshold.
  • Low Gate Drive.
  • SOT26 Package.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • For automotive.

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Datasheet preview – ZXMN10B08E6

Datasheet Details

Part number ZXMN10B08E6
Manufacturer DIODES
File Size 595.69 KB
Description 100V N-CHANNEL MOSFET
Datasheet download datasheet ZXMN10B08E6 Datasheet
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Full PDF Text Transcription

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Product Summary BVDSS 100V Max RDS(on) 230mΩ @ VGS = 10V 300mΩ @ VGS = 4.5V Max ID TA = +25C (Note 5) 1.9A 1.68A ZXMN10B08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits  Low On-Resistance  Fast Switching Speed  Low Threshold  Low Gate Drive  SOT26 Package  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotiveproducts/.
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