ZX5T951GQ datasheet, transistor equivalent, DIODES

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Features and benefits

* BVCEO > -60V
* IC = -5.5A High Continuous Collector Current
* ICM = -15A Peak Pulse Current
* Low Saturation Voltage VCE(sat) < -70mV @ -1A
* RSAT =.

Application

Features
* BVCEO > -60V
* IC = -5.5A High Continuous Collector Current
* ICM = -15A Peak Pulse Current
.

Description

This bipolar junction transistor (BJT) is designed to meet the stringent requirements of automotive applications. Features
* BVCEO > -60V
* IC = -5.5A High Continuous Collector Current
* ICM = -15A Peak Pulse Current
* Low Saturation .

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