DXT651Q datasheet, transistor equivalent, DIODES

Features and benefits

* BVCEO > 60V
* IC = 3A High Continuous Collector Current
* ICM up to 6A Peak Pulse Current
* 2W Power Dissipation
* Low Saturation Voltage VCE(SAT) <.

Application

Features
* BVCEO > 60V
* IC = 3A High Continuous Collector Current
* ICM up to 6A Peak Pulse Current
* .

Description

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications. Features
* BVCEO > 60V
* IC = 3A High Continuous Collector Current
* ICM up to 6A Peak Pulse Current
* 2W Power Dissipat.

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