* Rated to +175C
  – Ideal for High Ambient Temperature Environments
* 100% Unclamped Inductive Switching (UIS) Test in Production
  .

This new generation N-channel enhancement mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching pe.

and Applications This new generation N-channel enhancement mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switch.
* Motor control.

DMTH10H4M6SPSW

DMTH10H4M6SPSWQ

DMTH10H4M5LPS

DMTH10H4M5LPSW

DMTH10H4M5LPSWQ

DMTH10H003SPSW

DMTH10H005LCT

DMTH10H005SCT

DMTH10H009LFG

DMTH10H009LPS

DMTH10H009LPSQ

DMTH10H009SPS

DMTH10H009SPSQ

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